NX138AKVL NEXPERIA
Hersteller: NEXPERIACategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.12A; Idm: 0.765A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.12A
Pulsed drain current: 0.765A
Power dissipation: 0.265W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 20 Stücke
auf Bestellung 8974 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1020+ | 0.071 EUR |
| 1280+ | 0.056 EUR |
| 1460+ | 0.05 EUR |
| 3000+ | 0.045 EUR |
| 10000+ | 0.042 EUR |
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Technische Details NX138AKVL NEXPERIA
Description: MOSFET N-CH 60V 190MA TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 190mA (Ta), Rds On (Max) @ Id, Vgs: 4.5Ohm @ 190mA, 10V, Power Dissipation (Max): 265mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: TO-236AB, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V.
Weitere Produktangebote NX138AKVL nach Preis ab 0.045 EUR bis 0.076 EUR
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NX138AKVL | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.12A; Idm: 0.765A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.12A Pulsed drain current: 0.765A Power dissipation: 0.265W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 0.9nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 8974 Stücke: Lieferzeit 14-21 Tag (e) |
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NX138AKVL | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 190MA TO236AB Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 190mA, 10V Power Dissipation (Max): 265mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TO-236AB Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V |
auf Bestellung 170000 Stücke: Lieferzeit 10-14 Tag (e) |
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NX138AKVL | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 190MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 190mA, 10V Power Dissipation (Max): 265mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TO-236AB Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V |
Produkt ist nicht verfügbar |
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NX138AKVL | Hersteller : Nexperia |
MOSFETs SOT23 N-CH 60V .19A |
Produkt ist nicht verfügbar |