NX138AKVL Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 190MA TO236AB
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 190mA, 10V
Power Dissipation (Max): 265mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-236AB
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V
| Anzahl | Privatkunde |
|---|---|
| 6575+ | 0.092 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
6575 Stücke
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Technische Details NX138AKVL Nexperia USA Inc.
Description: MOSFET N-CH 60V 190MA TO236AB, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 190mA (Ta), Rds On (Max) @ Id, Vgs: 4.5Ohm @ 190mA, 10V, Power Dissipation (Max): 265mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: TO-236AB, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V.
Weitere Produktangebote NX138AKVL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
NX138AKVL | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.12A; Idm: 0.765A Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Case: SOT23; TO236AB Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.12A Gate charge: 0.9nC Power dissipation: 0.265W On-state resistance: 10Ω Pulsed drain current: 0.765A Gate-source voltage: ±20V |
auf Bestellung 8774 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NX138AKVL |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.12A; Idm: 0.765A
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23; TO236AB
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.12A
Gate charge: 0.9nC
Power dissipation: 0.265W
On-state resistance: 10Ω
Pulsed drain current: 0.765A
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.12A; Idm: 0.765A
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23; TO236AB
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.12A
Gate charge: 0.9nC
Power dissipation: 0.265W
On-state resistance: 10Ω
Pulsed drain current: 0.765A
Gate-source voltage: ±20V
auf Bestellung 8774 Stücke:
Lieferzeit 14-21 Tag (e)