NX3008PBKV,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET 2P-CH 30V 0.22A SOT666
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-666
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4000+ | 0.21 EUR |
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Technische Details NX3008PBKV,115 Nexperia USA Inc.
Description: MOSFET 2P-CH 30V 0.22A SOT666, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 220mA, Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V, Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: SOT-666, Grade: Automotive, Part Status: Not For New Designs, Qualification: AEC-Q101.
Weitere Produktangebote NX3008PBKV,115 nach Preis ab 0.21 EUR bis 1 EUR
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NX3008PBKV,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2P-CH 30V 0.22A SOT666 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 220mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-666 Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q101 |
auf Bestellung 5037 Stücke: Lieferzeit 21-28 Tag (e) |
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NX3008PBKV,115 | Hersteller : Nexperia |
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NX3008PBKV,115 | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -0.22A; 330mW; SOT666 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -0.22A Power dissipation: 0.33W Case: SOT666 Gate-source voltage: ±8V On-state resistance: 4.1Ω Mounting: SMD Gate charge: 0.72nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NX3008PBKV,115 | Hersteller : Nexperia |
Trans MOSFET P-CH 30V 0.22A 6-Pin SOT-666 T/R |
Produkt ist nicht verfügbar |
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NX3008PBKV,115 | Hersteller : NEXPERIA |
Trans MOSFET P-CH 30V 0.22A Automotive 6-Pin SOT-666 T/R |
Produkt ist nicht verfügbar |
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NX3008PBKV,115 | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -0.22A; 330mW; SOT666 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -0.22A Power dissipation: 0.33W Case: SOT666 Gate-source voltage: ±8V On-state resistance: 4.1Ω Mounting: SMD Gate charge: 0.72nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |