| Anzahl | Preis |
|---|---|
| 1287+ | 0.13 EUR |
| 2000+ | 0.11 EUR |
| 4000+ | 0.09 EUR |
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Technische Details NX3008PBKV,115 Nexperia
Description: MOSFET 2P-CH 30V 0.22A SOT666, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 220mA, Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V, Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: SOT-666, Grade: Automotive, Part Status: Not For New Designs, Qualification: AEC-Q101.
Weitere Produktangebote NX3008PBKV,115 nach Preis ab 0.12 EUR bis 0.65 EUR
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NX3008PBKV,115 | Hersteller : Nexperia |
 MOSFETs NX3008PBKV/SOT666/SOT6 |
auf Bestellung 4567 Stücke: Lieferzeit 10-14 Tag (e) |
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NX3008PBKV,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2P-CH 30V 0.22A SOT666 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 220mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-666 Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q101 |
auf Bestellung 3862 Stücke: Lieferzeit 10-14 Tag (e) |
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NX3008PBKV,115 | Hersteller : Nexperia |
Trans MOSFET P-CH 30V 0.22A 6-Pin SOT-666 T/R |
Produkt ist nicht verfügbar |
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NX3008PBKV,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2P-CH 30V 0.22A SOT666 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 220mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-666 Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |