Technische Details NX3020NAKV,115 Nexperia
Description: NEXPERIA - NX3020NAKV,115 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 200 mA, 200 mA, 4.5 ohm, tariffCode: 85412100, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 200mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 30V, MSL: MSL 1 - unbegrenzt, Dauer-Drainstrom Id, n-Kanal: 200mA, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: 375mW, Drain-Source-Spannung Vds, n-Kanal: 30V, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: SOT-666, Anzahl der Pins: 6Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 4.5ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 375mW, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote NX3020NAKV,115 nach Preis ab 0.086 EUR bis 0.8 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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NX3020NAKV,115 | Nexperia |
 Trans MOSFET N-CH 30V 0.2A 6-Pin SOT-666 T/R |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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NX3020NAKV,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 30V 0.2A SOT666 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 375mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-666 |
auf Bestellung 231598 Stücke: Lieferzeit 10-14 Tag (e) |
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NX3020NAKV,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 120mA; Idm: 0.8A; 375mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.12A Pulsed drain current: 0.8A Power dissipation: 375mW Case: SOT666 Gate-source voltage: ±20V On-state resistance: 9.2Ω Mounting: SMD Gate charge: 0.44nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 765 Stücke: Lieferzeit 14-21 Tag (e) |
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NX3020NAKV,115 | Nexperia |
MOSFETs NX3020NAKV/SOT666/SOT6 |
auf Bestellung 633 Stücke: Lieferzeit 10-14 Tag (e) |
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NX3020NAKV,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 30V 0.2A SOT666 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 375mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-666 |
auf Bestellung 231598 Stücke: Lieferzeit 10-14 Tag (e) |
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NX3020NAKV,115 | NEXPERIA |
Description: NEXPERIA - NX3020NAKV,115 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 200 mA, 200 mA, 4.5 ohm tariffCode: 85412100 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 200mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 200mA Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 375mW Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-666 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 4.5ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 375mW Betriebstemperatur, max.: 150°C |
auf Bestellung 748 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NX3020NAKV,115 | Nexperia |
Trans MOSFET N-CH 30V 0.2A 6-Pin SOT-666 T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NX3020NAKV,115 | Nexperia |
Trans MOSFET N-CH 30V 0.2A 6-Pin SOT-666 T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NX3020NAKV,115 |
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Hersteller: Nexperia
Trans MOSFET N-CH 30V 0.2A 6-Pin SOT-666 T/R
Trans MOSFET N-CH 30V 0.2A 6-Pin SOT-666 T/R
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12000+ | 0.094 EUR |
| 20000+ | 0.086 EUR |
| NX3020NAKV,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 0.2A SOT666
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-666
Description: MOSFET 2N-CH 30V 0.2A SOT666
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-666
auf Bestellung 231598 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.17 EUR |
| 8000+ | 0.15 EUR |
| 12000+ | 0.14 EUR |
| 20000+ | 0.13 EUR |
| 40000+ | 0.12 EUR |
| NX3020NAKV,115 |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 120mA; Idm: 0.8A; 375mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.12A
Pulsed drain current: 0.8A
Power dissipation: 375mW
Case: SOT666
Gate-source voltage: ±20V
On-state resistance: 9.2Ω
Mounting: SMD
Gate charge: 0.44nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 120mA; Idm: 0.8A; 375mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.12A
Pulsed drain current: 0.8A
Power dissipation: 375mW
Case: SOT666
Gate-source voltage: ±20V
On-state resistance: 9.2Ω
Mounting: SMD
Gate charge: 0.44nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 765 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 152+ | 0.56 EUR |
| 197+ | 0.43 EUR |
| 240+ | 0.36 EUR |
| 325+ | 0.26 EUR |
| 407+ | 0.21 EUR |
| 544+ | 0.15 EUR |
| NX3020NAKV,115 |
|
Hersteller: Nexperia
MOSFETs NX3020NAKV/SOT666/SOT6
MOSFETs NX3020NAKV/SOT666/SOT6
auf Bestellung 633 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.8 EUR |
| 10+ | 0.49 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.2 EUR |
| 2000+ | 0.19 EUR |
| 4000+ | 0.14 EUR |
| NX3020NAKV,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 0.2A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-666
Description: MOSFET 2N-CH 30V 0.2A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-666
auf Bestellung 231598 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 0.8 EUR |
| 43+ | 0.49 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| 2000+ | 0.18 EUR |
| NX3020NAKV,115 |
|
Hersteller: NEXPERIA
Description: NEXPERIA - NX3020NAKV,115 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 200 mA, 200 mA, 4.5 ohm
tariffCode: 85412100
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 200mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 200mA
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 375mW
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-666
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 4.5ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 375mW
Betriebstemperatur, max.: 150°C
Description: NEXPERIA - NX3020NAKV,115 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 200 mA, 200 mA, 4.5 ohm
tariffCode: 85412100
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 200mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 200mA
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 375mW
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-666
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 4.5ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 375mW
Betriebstemperatur, max.: 150°C
auf Bestellung 748 Stücke:
Lieferzeit 14-21 Tag (e)
| NX3020NAKV,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 30V 0.2A 6-Pin SOT-666 T/R
Trans MOSFET N-CH 30V 0.2A 6-Pin SOT-666 T/R
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| NX3020NAKV,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 30V 0.2A 6-Pin SOT-666 T/R
Trans MOSFET N-CH 30V 0.2A 6-Pin SOT-666 T/R
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)