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NX3020NAKVYL

NX3020NAKVYL Nexperia

NX3020NAKV.pdf
Hersteller: Nexperia
MOSFETs SOT666 2NCH 30V .26A
auf Bestellung 8415 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.64 EUR
10+0.39 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.15 EUR
5000+0.1 EUR
Mindestbestellmenge: 5
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Technische Details NX3020NAKVYL Nexperia

Description: MOSFET 2N-CH 30V 0.2A SOT666, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 260mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 200mA, Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 10V, Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-666.

Weitere Produktangebote NX3020NAKVYL nach Preis ab 0.15 EUR bis 0.7 EUR

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Preis
NX3020NAKVYL NX3020NAKVYL Hersteller : Nexperia USA Inc. NX3020NAKV.pdf Description: MOSFET 2N-CH 30V 0.2A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 260mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-666
auf Bestellung 7623 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
42+0.43 EUR
100+0.2 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
NX3020NAKVYL NX3020NAKVYL Hersteller : Nexperia USA Inc. NX3020NAKV.pdf Description: MOSFET 2N-CH 30V 0.2A SOT666
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 260mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-666
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Im Einkaufswagen  Stück im Wert von  UAH