| Anzahl | Preis |
|---|---|
| 16+ | 0.18 EUR |
| 26+ | 0.11 EUR |
| 100+ | 0.084 EUR |
| 500+ | 0.081 EUR |
| 1000+ | 0.077 EUR |
| 2500+ | 0.072 EUR |
| 5000+ | 0.069 EUR |
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Technische Details NX5008NBKHH Nexperia
Description: MOSFET N-CH 50V 350MA DFN0606-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 4.5V, Power Dissipation (Max): 380mW (Ta), 2.8W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: DFN0606-3, Part Status: Active, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V.
Weitere Produktangebote NX5008NBKHH
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NX5008NBKHH | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 50V 350MA DFN0606-3Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 4.5V Power Dissipation (Max): 380mW (Ta), 2.8W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN0606-3 Part Status: Active Vgs (Max): ±8V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V |
Produkt ist nicht verfügbar |
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NX5008NBKHH | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 50V 350MA DFN0606-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 4.5V Power Dissipation (Max): 380mW (Ta), 2.8W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN0606-3 Part Status: Active Vgs (Max): ±8V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V |
Produkt ist nicht verfügbar |