NX5020UNBKR Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: NX5020UNBK/SOT23/TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), 680mA (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 330mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: TO-236AB
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.5 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 63+ | 0.33 EUR |
| 108+ | 0.19 EUR |
| 151+ | 0.14 EUR |
| 175+ | 0.12 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
63 Stücke
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Produktbewertung abgeben
Technische Details NX5020UNBKR Nexperia USA Inc.
Description: NX5020UNBK/SOT23/TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), 680mA (Tc), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 330mA, 10V, Power Dissipation (Max): 310mW (Ta), 1.7W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: TO-236AB, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20.5 pF @ 25 V.
Weitere Produktangebote NX5020UNBKR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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NX5020UNBKR | Nexperia USA Inc. |
Description: NX5020UNBK/SOT23/TO-236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), 680mA (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 330mA, 10V Power Dissipation (Max): 310mW (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: TO-236AB Drive Voltage (Max Rds On, Min Rds On): 1.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20.5 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NX5020UNBKR |
|
Hersteller: Nexperia USA Inc.
Description: NX5020UNBK/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), 680mA (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 330mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: TO-236AB
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.5 pF @ 25 V
Description: NX5020UNBK/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), 680mA (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 330mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: TO-236AB
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.5 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH