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NX5020UNBKSX

NX5020UNBKSX Nexperia

NX5020UNBKS.pdf
Hersteller: Nexperia
MOSFETs NX5020UNBKS/SOT363/SC-88
auf Bestellung 839 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+0.45 EUR
11+0.28 EUR
100+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
3000+0.093 EUR
6000+0.084 EUR
Mindestbestellmenge: 7
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Technische Details NX5020UNBKSX Nexperia

Description: NX5020UNBKS/SOT363/SC-88, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 280mW (Ta), 860mW (Tc), Drain to Source Voltage (Vdss): 50V, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), 480mA (Tc), Input Capacitance (Ciss) (Max) @ Vds: 20.5pF @ 25V, Rds On (Max) @ Id, Vgs: 1.8Ohm @ 300mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: 6-TSSOP.

Weitere Produktangebote NX5020UNBKSX nach Preis ab 0.19 EUR bis 0.49 EUR

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Preis
NX5020UNBKSX NX5020UNBKSX Hersteller : Nexperia USA Inc. NX5020UNBKS.pdf Description: NX5020UNBKS/SOT363/SC-88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 280mW (Ta), 860mW (Tc)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), 480mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 20.5pF @ 25V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 300mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 6-TSSOP
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
60+0.3 EUR
83+0.21 EUR
100+0.19 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
NX5020UNBKSX NX5020UNBKSX Hersteller : Nexperia USA Inc. NX5020UNBKS.pdf Description: NX5020UNBKS/SOT363/SC-88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 280mW (Ta), 860mW (Tc)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), 480mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 20.5pF @ 25V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 300mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 6-TSSOP
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Im Einkaufswagen  Stück im Wert von  UAH