auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 30000+ | 0.026 EUR |
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Technische Details NX6008NBKR Nexperia
Description: NX6008NBK/SOT23/TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 270mA (Ta), Rds On (Max) @ Id, Vgs: 2.8Ohm @ 300mA, 4.5V, Power Dissipation (Max): 270mW (Ta), 1.3W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 30 V.
Weitere Produktangebote NX6008NBKR nach Preis ab 0.027 EUR bis 0.34 EUR
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NX6008NBKR | Hersteller : Nexperia |
 Trans MOSFET N-CH 60V 0.27A 3-Pin SOT-23 T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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NX6008NBKR | Hersteller : Nexperia USA Inc. |
Description: NX6008NBK/SOT23/TO-236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 300mA, 4.5V Power Dissipation (Max): 270mW (Ta), 1.3W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 30 V |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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NX6008NBKR | Hersteller : Nexperia USA Inc. |
Description: NX6008NBK/SOT23/TO-236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 300mA, 4.5V Power Dissipation (Max): 270mW (Ta), 1.3W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 30 V |
auf Bestellung 28098 Stücke: Lieferzeit 10-14 Tag (e) |
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NX6008NBKR | Hersteller : Nexperia |
MOSFET NX6008NBK/SOT23/TO-236AB |
auf Bestellung 35665 Stücke: Lieferzeit 10-14 Tag (e) |
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| NX6008NBKR | Hersteller : NEXPERIA |
Trans MOSFET N-CH 60V 0.27A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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NX6008NBKR | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 0.27A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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| NX6008NBKR | Hersteller : NEXPERIA |
NX6008NBKR SMD N channel transistors |
Produkt ist nicht verfügbar |