| Anzahl | Privatkunde |
|---|---|
| 27000+ | 0.033 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
27000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details NX6008NBKR Nexperia
Description: NX6008NBK/SOT23/TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 270mA (Ta), Rds On (Max) @ Id, Vgs: 2.8Ohm @ 300mA, 4.5V, Power Dissipation (Max): 270mW (Ta), 1.3W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 30 V.
Weitere Produktangebote NX6008NBKR nach Preis ab 0.033 EUR bis 0.36 EUR
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NX6008NBKR | Nexperia |
 Trans MOSFET N-CH 60V 0.27A 3-Pin SOT-23 T/R |
auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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NX6008NBKR | Nexperia USA Inc. |
Description: NX6008NBK/SOT23/TO-236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 300mA, 4.5V Power Dissipation (Max): 270mW (Ta), 1.3W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 30 V |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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NX6008NBKR | Nexperia |
MOSFETs NX6008NBK/SOT23/TO-236AB |
auf Bestellung 98786 Stücke: Lieferzeit 10-14 Tag (e) |
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NX6008NBKR | Nexperia USA Inc. |
Description: NX6008NBK/SOT23/TO-236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 300mA, 4.5V Power Dissipation (Max): 270mW (Ta), 1.3W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 30 V |
auf Bestellung 28098 Stücke: Lieferzeit 10-14 Tag (e) |
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| NX6008NBKR |
|
Hersteller: Nexperia
Trans MOSFET N-CH 60V 0.27A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 60V 0.27A 3-Pin SOT-23 T/R
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27000+ | 0.033 EUR |
| NX6008NBKR |
|
Hersteller: Nexperia USA Inc.
Description: NX6008NBK/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 300mA, 4.5V
Power Dissipation (Max): 270mW (Ta), 1.3W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 30 V
Description: NX6008NBK/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 300mA, 4.5V
Power Dissipation (Max): 270mW (Ta), 1.3W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 30 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.046 EUR |
| 6000+ | 0.044 EUR |
| 9000+ | 0.04 EUR |
| 15000+ | 0.037 EUR |
| NX6008NBKR |
|
Hersteller: Nexperia
MOSFETs NX6008NBK/SOT23/TO-236AB
MOSFETs NX6008NBK/SOT23/TO-236AB
auf Bestellung 98786 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 0.35 EUR |
| 21+ | 0.14 EUR |
| 100+ | 0.13 EUR |
| 500+ | 0.094 EUR |
| 1000+ | 0.092 EUR |
| 3000+ | 0.067 EUR |
| 9000+ | 0.057 EUR |
| NX6008NBKR |
|
Hersteller: Nexperia USA Inc.
Description: NX6008NBK/SOT23/TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 300mA, 4.5V
Power Dissipation (Max): 270mW (Ta), 1.3W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 30 V
Description: NX6008NBK/SOT23/TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 300mA, 4.5V
Power Dissipation (Max): 270mW (Ta), 1.3W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 30 V
auf Bestellung 28098 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 59+ | 0.36 EUR |
| 99+ | 0.21 EUR |
| 265+ | 0.08 EUR |
| 500+ | 0.077 EUR |
| 1000+ | 0.074 EUR |