Produkte > NEXPERIA USA INC. > NX7002BKXBZ

NX7002BKXBZ Nexperia USA Inc.


NX7002BKXB.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 0.26A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 260mA
Input Capacitance (Ciss) (Max) @ Vds: 23.6pF @ 10V
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.11 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NX7002BKXBZ Nexperia USA Inc.

Description: MOSFET 2N-CH 60V 0.26A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 285mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 260mA, Input Capacitance (Ciss) (Max) @ Vds: 23.6pF @ 10V, Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: DFN1010B-6, Part Status: Active.

Weitere Produktangebote NX7002BKXBZ nach Preis ab 0.11 EUR bis 0.58 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
NX7002BKXBZ NX7002BKXBZ Nexperia NX7002BKXB.pdf MOSFETs SOT1216 N-CH 60V .26A
auf Bestellung 18051 Stücke:
Lieferzeit 10-14 Tag (e)
6+0.56 EUR
10+0.35 EUR
100+0.16 EUR
500+0.14 EUR
1000+0.13 EUR
5000+0.11 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NX7002BKXBZ NX7002BKXBZ Nexperia USA Inc. NX7002BKXB.pdf Description: MOSFET 2N-CH 60V 0.26A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 2.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 23.6pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 260mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 285mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 8290 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
50+0.36 EUR
112+0.16 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 31 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NX7002BKXBZ NX7002BKXB.pdf
Hersteller: Nexperia
MOSFETs SOT1216 N-CH 60V .26A
auf Bestellung 18051 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+0.56 EUR
10+0.35 EUR
100+0.16 EUR
500+0.14 EUR
1000+0.13 EUR
5000+0.11 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NX7002BKXBZ NX7002BKXB.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 0.26A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 2.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 23.6pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 260mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 285mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 8290 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
31+0.58 EUR
50+0.36 EUR
112+0.16 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 31 Stücke
Im Einkaufswagen  Stück im Wert von  UAH