NXH003P120M3F2PTNG onsemi
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MODULE EL
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.48kW (Tj)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20889pF @ 800V
Rds On (Max) @ Id, Vgs: 5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1200nC @ 20V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 160mA
Supplier Device Package: 36-PIM (56.7x62.8)
Description: SILICON CARBIDE (SIC) MODULE EL
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.48kW (Tj)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20889pF @ 800V
Rds On (Max) @ Id, Vgs: 5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1200nC @ 20V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 160mA
Supplier Device Package: 36-PIM (56.7x62.8)
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 420.46 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NXH003P120M3F2PTNG onsemi
Description: SILICON CARBIDE (SIC) MODULE EL, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1.48kW (Tj), Drain to Source Voltage (Vdss): 1200V, Current - Continuous Drain (Id) @ 25°C: 435A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 20889pF @ 800V, Rds On (Max) @ Id, Vgs: 5mOhm @ 200A, 18V, Gate Charge (Qg) (Max) @ Vgs: 1200nC @ 20V, FET Feature: Silicon Carbide (SiC), Vgs(th) (Max) @ Id: 4.4V @ 160mA, Supplier Device Package: 36-PIM (56.7x62.8).
Weitere Produktangebote NXH003P120M3F2PTNG nach Preis ab 383.84 EUR bis 423.42 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NXH003P120M3F2PTNG | Hersteller : onsemi |
 Discrete Semiconductor Modules Silicon Carbide (SiC) Module - EliteSiC, 3 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package Silicon Carbide (SiC) Module EliteSiC, 3 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package |
auf Bestellung 47 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
| NXH003P120M3F2PTNG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 435A 36-Pin PIM Tray |
Produkt ist nicht verfügbar |