NXH003P120M3F2PTNG onsemi

Description: MOSFET 2N-CH 1200V 435A 36PIM, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1.48kW (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 435A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 20889pF @ 800V, Rds On (Max) @ Id, Vgs: 5mOhm @ 200A, 18V, Gate Charge (Qg) (Max) @ Vgs: 1200nC @ 20V, Vgs(th) (Max) @ Id: 4.4V @ 160mA, Supplier Device Package: 36-PIM (56.7x62.8).