NXH004P120M3F2PTHG onsemi
Hersteller: onsemiDiscrete Semiconductor Modules 1200V 4M M3S SIC HALFBRIDGE WITH HPS DBC IN F2 MODULES
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 326.5 EUR |
| 10+ | 305.8 EUR |
| 20+ | 295.98 EUR |
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Technische Details NXH004P120M3F2PTHG onsemi
Description: ELITESIC, 3 MOHM SIC M3S MOSFET,, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 785W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 284A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V, Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V, Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V, Vgs(th) (Max) @ Id: 4.4V @ 120mA, Supplier Device Package: 36-PIM (56.7x62.8).
Weitere Produktangebote NXH004P120M3F2PTHG nach Preis ab 296.33 EUR bis 328.73 EUR
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NXH004P120M3F2PTHG | Hersteller : onsemi |
Description: ELITESIC, 3 MOHM SIC M3S MOSFET, Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 785W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 284A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V Vgs(th) (Max) @ Id: 4.4V @ 120mA Supplier Device Package: 36-PIM (56.7x62.8) |
auf Bestellung 52 Stücke: Lieferzeit 10-14 Tag (e) |
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| NXH004P120M3F2PTHG | Hersteller : ON Semiconductor |
Silicon Carbide Module -Elite SIC, 4mohm SIC M3 MOSFET |
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