NXH004P120M3F2PTNG onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V 338A 36PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1100W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 338A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 120mA
Supplier Device Package: 36-PIM (56.7x62.8)
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Technische Details NXH004P120M3F2PTNG onsemi
Description: MOSFET 2N-CH 1200V 338A 36PIM, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1100W (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 338A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V, Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V, Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V, Vgs(th) (Max) @ Id: 4.4V @ 120mA, Supplier Device Package: 36-PIM (56.7x62.8).
Weitere Produktangebote NXH004P120M3F2PTNG nach Preis ab 319.72 EUR bis 326.76 EUR
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NXH004P120M3F2PTNG | onsemi |
MOSFET Modules 1200V 4M M3S SIC HALFBRIDGE WITH SI3N4 DBC IN F2 MODULES |
auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) |
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| NXH004P120M3F2PTNG |
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Hersteller: onsemi
MOSFET Modules 1200V 4M M3S SIC HALFBRIDGE WITH SI3N4 DBC IN F2 MODULES
MOSFET Modules 1200V 4M M3S SIC HALFBRIDGE WITH SI3N4 DBC IN F2 MODULES
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 326.76 EUR |
| 20+ | 319.72 EUR |