NXH007F120M3F2PTHG onsemi
Hersteller: onsemi
Description: 7M 1200V 40A M3S SIC FULL BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 353W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 149A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9090pF @ 800V
Rds On (Max) @ Id, Vgs: 10mOhm @ 120A, 18V
Gate Charge (Qg) (Max) @ Vgs: 407nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
Supplier Device Package: 34-PIM (56.7x42.5)
Description: 7M 1200V 40A M3S SIC FULL BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 353W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 149A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9090pF @ 800V
Rds On (Max) @ Id, Vgs: 10mOhm @ 120A, 18V
Gate Charge (Qg) (Max) @ Vgs: 407nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
Supplier Device Package: 34-PIM (56.7x42.5)
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 260.44 EUR |
| 20+ | 243.93 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NXH007F120M3F2PTHG onsemi
Description: 7M 1200V 40A M3S SIC FULL BRIDGE, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 353W (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 149A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 9090pF @ 800V, Rds On (Max) @ Id, Vgs: 10mOhm @ 120A, 18V, Gate Charge (Qg) (Max) @ Vgs: 407nC @ 18V, FET Feature: Silicon Carbide (SiC), Vgs(th) (Max) @ Id: 4.4V @ 60mA, Supplier Device Package: 34-PIM (56.7x42.5).
Weitere Produktangebote NXH007F120M3F2PTHG nach Preis ab 237.81 EUR bis 262.35 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NXH007F120M3F2PTHG | Hersteller : onsemi | Discrete Semiconductor Modules Silicon Carbide (SiC) Module - EliteSiC, 7 mohm SiC M3S MOSFET, 1200 V, 4-PACK Full Bridge Topology, F2 Package Silicon Carbide (SiC) Module ? EliteSiC, 7 mohm SiC M3S MOSFET, 1200 V, 4-PACK Full Bridge Topology, F2 Package |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||
| NXH007F120M3F2PTHG | Hersteller : ON Semiconductor |
 SiliconCarbide Module MOSFET |
Produkt ist nicht verfügbar |