NXH007F120M3F2PTHG onsemi

Description: MOSFET 4N-CH 1200V 149A 34PIM, Power - Max: 353W (Tj), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 175°C (TJ), Configuration: 4 N-Channel (Full Bridge), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray, Supplier Device Package: 34-PIM (56.7x42.5), Vgs(th) (Max) @ Id: 4.4V @ 60mA, FET Feature: Silicon Carbide (SiC), Gate Charge (Qg) (Max) @ Vgs: 407nC @ 18V, Rds On (Max) @ Id, Vgs: 10mOhm @ 120A, 18V, Input Capacitance (Ciss) (Max) @ Vds: 9090pF @ 800V, Current - Continuous Drain (Id) @ 25°C: 149A (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV).