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NXH008P120M3F1PTG

NXH008P120M3F1PTG onsemi

nxh008p120m3f1-d.pdf
Hersteller: onsemi
MOSFET Modules 8M OHM 1200V 40A M3S SIC HALF BRIDGE MODULE
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+149.9 EUR
10+148.88 EUR
112+141.36 EUR
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Technische Details NXH008P120M3F1PTG onsemi

Description: MOSFET 2N-CH 1200V 145A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 382W (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 145A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 8334pF @ 800V, Rds On (Max) @ Id, Vgs: 10.9mOhm @ 120A, 18V, Gate Charge (Qg) (Max) @ Vgs: 419nC @ 18V, FET Feature: Silicon Carbide (SiC), Vgs(th) (Max) @ Id: 4.4V @ 60mA.

Weitere Produktangebote NXH008P120M3F1PTG nach Preis ab 131.48 EUR bis 172.48 EUR

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NXH008P120M3F1PTG NXH008P120M3F1PTG Hersteller : onsemi nxh008p120m3f1-d.pdf Description: MOSFET 2N-CH 1200V 145A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 382W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8334pF @ 800V
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 120A, 18V
Gate Charge (Qg) (Max) @ Vgs: 419nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+172.48 EUR
10+139.39 EUR
28+131.48 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH008P120M3F1PTG Hersteller : ONSEMI nxh008p120m3f1-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 145A; PIM18; Press-in PCB
Case: PIM18
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: transistor/transistor
Gate-source voltage: -10...22V
On-state resistance: 18.1mΩ
Drain current: 145A
Power dissipation: 382W
Pulsed drain current: 436A
Drain-source voltage: 1.2kV
Kind of package: in-tray
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
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