NXH008P120M3F1PTG onsemi
auf Bestellung 43 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 171.07 EUR |
| 10+ | 156.2 EUR |
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Technische Details NXH008P120M3F1PTG onsemi
Description: MOSFET 2N-CH 1200V 145A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 382W (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 145A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 8334pF @ 800V, Rds On (Max) @ Id, Vgs: 10.9mOhm @ 120A, 18V, Gate Charge (Qg) (Max) @ Vgs: 419nC @ 18V, FET Feature: Silicon Carbide (SiC), Vgs(th) (Max) @ Id: 4.4V @ 60mA.
Weitere Produktangebote NXH008P120M3F1PTG nach Preis ab 131.48 EUR bis 172.48 EUR
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NXH008P120M3F1PTG | Hersteller : onsemi |
 Description: MOSFET 2N-CH 1200V 145APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 382W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 8334pF @ 800V Rds On (Max) @ Id, Vgs: 10.9mOhm @ 120A, 18V Gate Charge (Qg) (Max) @ Vgs: 419nC @ 18V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 4.4V @ 60mA |
auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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