NXH008T120M3F2PTHG onsemi
Hersteller: onsemi
Description: MOSFET 4N-CH 1200V 129A 29PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 371W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9129pF @ 800V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 60mA
Supplier Device Package: 29-PIM (56.7x42.5)
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Technische Details NXH008T120M3F2PTHG onsemi
Description: MOSFET 4N-CH 1200V 129A 29PIM, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel, Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 371W (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 129A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 9129pF @ 800V, Rds On (Max) @ Id, Vgs: 11.5mOhm @ 100A, 18V, Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V, Vgs(th) (Max) @ Id: 4.4V @ 60mA, Supplier Device Package: 29-PIM (56.7x42.5).
Weitere Produktangebote NXH008T120M3F2PTHG nach Preis ab 235.17 EUR bis 257.98 EUR
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NXH008T120M3F2PTHG | onsemi |
MOSFET Modules 8M 1200V 40A M3S SIC TNPC MODULE |
auf Bestellung 37 Stücke: Lieferzeit 10-14 Tag (e) |
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| NXH008T120M3F2PTHG |
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Hersteller: onsemi
MOSFET Modules 8M 1200V 40A M3S SIC TNPC MODULE
MOSFET Modules 8M 1200V 40A M3S SIC TNPC MODULE
auf Bestellung 37 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 257.98 EUR |
| 10+ | 235.17 EUR |