Produkte > ONSEMI > NXH010P120M3F1PG
NXH010P120M3F1PG

NXH010P120M3F1PG onsemi


nxh010p120m3f1-d.pdf Hersteller: onsemi
Description: MOSFET 2N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 272W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6451pF @ 800V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 90A, 18V
Gate Charge (Qg) (Max) @ Vgs: 314nC @ 18V
Vgs(th) (Max) @ Id: 4.4V @ 45mA
auf Bestellung 28 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+111.83 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NXH010P120M3F1PG onsemi

Description: MOSFET 2N-CH 1200V 105A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 272W (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 105A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 6451pF @ 800V, Rds On (Max) @ Id, Vgs: 14.5mOhm @ 90A, 18V, Gate Charge (Qg) (Max) @ Vgs: 314nC @ 18V, Vgs(th) (Max) @ Id: 4.4V @ 45mA.

Weitere Produktangebote NXH010P120M3F1PG nach Preis ab 131.67 EUR bis 144.23 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NXH010P120M3F1PG NXH010P120M3F1PG Hersteller : onsemi NXH010P120M3F1_D-3473594.pdf MOSFET Modules 10M OHM 1200V 40A M3S SIC HALF BRIDGE MODULE
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+144.23 EUR
10+131.67 EUR
Im Einkaufswagen  Stück im Wert von  UAH