NXH010P120M3F1PTG onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 272W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6451pF @ 800V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 90A, 18V
Gate Charge (Qg) (Max) @ Vgs: 314nC @ 18V
Vgs(th) (Max) @ Id: 4.4V @ 45mA
auf Bestellung 4227 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 111.83 EUR |
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Technische Details NXH010P120M3F1PTG onsemi
Description: MOSFET 2N-CH 1200V 105A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 272W (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 105A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 6451pF @ 800V, Rds On (Max) @ Id, Vgs: 14.5mOhm @ 90A, 18V, Gate Charge (Qg) (Max) @ Vgs: 314nC @ 18V, Vgs(th) (Max) @ Id: 4.4V @ 45mA.
Weitere Produktangebote NXH010P120M3F1PTG nach Preis ab 117.29 EUR bis 141.20 EUR
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NXH010P120M3F1PTG | Hersteller : onsemi |
MOSFET Modules 10M OHM 1200V 40A M3S SIC HALF BRIDGE MODULE |
auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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