NXH010P120MNF1PG onsemi
auf Bestellung 28 Stücke:
Lieferzeit 543-547 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 257.84 EUR |
| 10+ | 241.49 EUR |
| 28+ | 233.75 EUR |
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Technische Details NXH010P120MNF1PG onsemi
Description: PIM F1 SIC HALFBRIDGE 1200V 10MO, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual) Common Source, Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 250W (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 114A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V, Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V, Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V, Vgs(th) (Max) @ Id: 4.3V @ 40mA, Part Status: Active.
Weitere Produktangebote NXH010P120MNF1PG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| NXH010P120MNF1PG | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH SiC 1.2KV 114A Automotive |
Produkt ist nicht verfügbar |
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| NXH010P120MNF1PG | Hersteller : onsemi |
Description: PIM F1 SIC HALFBRIDGE 1200V 10MO Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 250W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 114A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V Vgs(th) (Max) @ Id: 4.3V @ 40mA Part Status: Active |
Produkt ist nicht verfügbar |