NXH010P90MNF1PTG onsemi

Description: MOSFET 2N-CH 900V 154A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual) Common Source, Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 328W (Tj), Drain to Source Voltage (Vdss): 900V, Current - Continuous Drain (Id) @ 25°C: 154A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 7007pF @ 450V, Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V, Gate Charge (Qg) (Max) @ Vgs: 546.4nC @ 15V, Vgs(th) (Max) @ Id: 4.3V @ 40mA.