NXH010P90MNF1PTG onsemi
auf Bestellung 56 Stücke:
Lieferzeit 895-899 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 264.25 EUR |
| 10+ | 247.49 EUR |
| 28+ | 239.54 EUR |
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Technische Details NXH010P90MNF1PTG onsemi
Description: PIM F1 SIC HALFBRIDGE 900V 10MOH, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual) Common Source, Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 328W (Tj), Drain to Source Voltage (Vdss): 900V, Current - Continuous Drain (Id) @ 25°C: 154A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 7007pF @ 450V, Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V, Gate Charge (Qg) (Max) @ Vgs: 546.4nC @ 15V, Vgs(th) (Max) @ Id: 4.3V @ 40mA, Part Status: Active.
Weitere Produktangebote NXH010P90MNF1PTG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| NXH010P90MNF1PTG | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH SiC 900V 154A Automotive Tray |
Produkt ist nicht verfügbar |
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| NXH010P90MNF1PTG | Hersteller : onsemi |
Description: PIM F1 SIC HALFBRIDGE 900V 10MOH Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 328W (Tj) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 154A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 7007pF @ 450V Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V Gate Charge (Qg) (Max) @ Vgs: 546.4nC @ 15V Vgs(th) (Max) @ Id: 4.3V @ 40mA Part Status: Active |
Produkt ist nicht verfügbar |