Technische Details NXH011T120M3F2PTHG onsemi
Description: MOSFET 4N-CH 1200V 91A 29PIM, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Solar Inverter), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 272W (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 91A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 6331pF @ 800V, Rds On (Max) @ Id, Vgs: 16mOhm @ 70A, 18V, Gate Charge (Qg) (Max) @ Vgs: 306nC @ 20V, Vgs(th) (Max) @ Id: 4.4V @ 40mA, Supplier Device Package: 29-PIM (56.7x42.5).
Weitere Produktangebote NXH011T120M3F2PTHG nach Preis ab 155.29 EUR bis 183.46 EUR
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NXH011T120M3F2PTHG | onsemi |
 Description: MOSFET 4N-CH 1200V 91A 29PIMPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Solar Inverter) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 272W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 91A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6331pF @ 800V Rds On (Max) @ Id, Vgs: 16mOhm @ 70A, 18V Gate Charge (Qg) (Max) @ Vgs: 306nC @ 20V Vgs(th) (Max) @ Id: 4.4V @ 40mA Supplier Device Package: 29-PIM (56.7x42.5) |
auf Bestellung 13928 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: onsemi
Description: MOSFET 4N-CH 1200V 91A 29PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Solar Inverter)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 272W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6331pF @ 800V
Rds On (Max) @ Id, Vgs: 16mOhm @ 70A, 18V
Gate Charge (Qg) (Max) @ Vgs: 306nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 40mA
Supplier Device Package: 29-PIM (56.7x42.5)
Description: MOSFET 4N-CH 1200V 91A 29PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Solar Inverter)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 272W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6331pF @ 800V
Rds On (Max) @ Id, Vgs: 16mOhm @ 70A, 18V
Gate Charge (Qg) (Max) @ Vgs: 306nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 40mA
Supplier Device Package: 29-PIM (56.7x42.5)
auf Bestellung 13928 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 183.46 EUR |
| 20+ | 155.29 EUR |