Technische Details NXH020F120MNF1PG ON Semiconductor
Description: SIC 4N-CH 1200V 51A 22PIM, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 119W (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 51A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V, Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V, Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V, Vgs(th) (Max) @ Id: 4.3V @ 20mA, Supplier Device Package: 22-PIM (33.8x42.5).
Weitere Produktangebote NXH020F120MNF1PG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NXH020F120MNF1PG | Hersteller : onsemi |
 Description: SIC 4N-CH 1200V 51A 22PIMPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 119W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V Vgs(th) (Max) @ Id: 4.3V @ 20mA Supplier Device Package: 22-PIM (33.8x42.5) |
Produkt ist nicht verfügbar |
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NXH020F120MNF1PG | Hersteller : onsemi |
Discrete Semiconductor Modules SiC Module, 4-PACK Full Bridge Topology, 1200 V, 20 mohm M1 SiC MOSFET |
Produkt ist nicht verfügbar |