NXH020P120MNF1PG onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 1200V 51A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 20mA
auf Bestellung 140 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 181.53 EUR |
| 28+ | 155.92 EUR |
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Technische Details NXH020P120MNF1PG onsemi
Description: MOSFET 2N-CH 1200V 51A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 119W (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 51A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V, Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V, Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V, Vgs(th) (Max) @ Id: 4.3V @ 20mA.
Weitere Produktangebote NXH020P120MNF1PG nach Preis ab 181.56 EUR bis 184.87 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NXH020P120MNF1PG | Hersteller : onsemi |
MOSFET Modules PIM F1 SIC HALFBRIDGE 1200V 20MOHM |
auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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| NXH020P120MNF1PG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 51A |
Produkt ist nicht verfügbar |
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| NXH020P120MNF1PG | Hersteller : ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM18 Topology: MOSFET half-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |