NXH020P120MNF1PG onsemi
Hersteller: onsemiDiscrete Semiconductor Modules SiC Module, 2-PACK Half Bridge Topology, 1200 V, 20 mohm SiC M1 MOSFET
auf Bestellung 25 Stücke:
Lieferzeit 87-91 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 185.4 EUR |
| 10+ | 169.26 EUR |
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Technische Details NXH020P120MNF1PG onsemi
Description: SIC 2N-CH 1200V 51A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual) Common Source, Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 119W (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 51A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V, Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V, Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V, Vgs(th) (Max) @ Id: 4.3V @ 20mA.
Weitere Produktangebote NXH020P120MNF1PG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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|---|---|---|---|---|---|
| NXH020P120MNF1PG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 51A |
Produkt ist nicht verfügbar |
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| NXH020P120MNF1PG | Hersteller : onsemi |
Description: SIC 2N-CH 1200V 51A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 119W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V Vgs(th) (Max) @ Id: 4.3V @ 20mA |
Produkt ist nicht verfügbar |