Technische Details NXH030F120M3F1PTG onsemi
Description: MOSFET 4N-CH 1200V 38A 22PIM, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 100W (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2246pF @ 800V, Rds On (Max) @ Id, Vgs: 38.5mOhm @ 30A, 18V, Gate Charge (Qg) (Max) @ Vgs: 110nC @ 18V, FET Feature: Depletion Mode, Vgs(th) (Max) @ Id: 4.4V @ 15mA, Supplier Device Package: 22-PIM (33.8x42.5).
Weitere Produktangebote NXH030F120M3F1PTG nach Preis ab 102.86 EUR bis 139.55 EUR
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NXH030F120M3F1PTG | onsemi |
 Description: MOSFET 4N-CH 1200V 38A 22PIMPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 100W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2246pF @ 800V Rds On (Max) @ Id, Vgs: 38.5mOhm @ 30A, 18V Gate Charge (Qg) (Max) @ Vgs: 110nC @ 18V FET Feature: Depletion Mode Vgs(th) (Max) @ Id: 4.4V @ 15mA Supplier Device Package: 22-PIM (33.8x42.5) |
auf Bestellung 35 Stücke: Lieferzeit 10-14 Tag (e) |
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| NXH030F120M3F1PTG |
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Hersteller: onsemi
Description: MOSFET 4N-CH 1200V 38A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 100W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2246pF @ 800V
Rds On (Max) @ Id, Vgs: 38.5mOhm @ 30A, 18V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 18V
FET Feature: Depletion Mode
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: 22-PIM (33.8x42.5)
Description: MOSFET 4N-CH 1200V 38A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 100W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2246pF @ 800V
Rds On (Max) @ Id, Vgs: 38.5mOhm @ 30A, 18V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 18V
FET Feature: Depletion Mode
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: 22-PIM (33.8x42.5)
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 139.55 EUR |
| 28+ | 102.86 EUR |