NXH030F120M3F1PTG onsemi
Hersteller: onsemiDescription: MOSFET 4N-CH 1200V 38A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 100W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2246pF @ 800V
Rds On (Max) @ Id, Vgs: 38.5mOhm @ 30A, 18V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 18V
FET Feature: Depletion Mode
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: 22-PIM (33.8x42.5)
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 114.12 EUR |
| 10+ | 90.97 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NXH030F120M3F1PTG onsemi
Description: MOSFET 4N-CH 1200V 38A 22PIM, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 100W (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2246pF @ 800V, Rds On (Max) @ Id, Vgs: 38.5mOhm @ 30A, 18V, Gate Charge (Qg) (Max) @ Vgs: 110nC @ 18V, FET Feature: Depletion Mode, Vgs(th) (Max) @ Id: 4.4V @ 15mA, Supplier Device Package: 22-PIM (33.8x42.5).
Weitere Produktangebote NXH030F120M3F1PTG nach Preis ab 95.39 EUR bis 118.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NXH030F120M3F1PTG | Hersteller : onsemi |
MOSFET Modules 30M OHM 1200V 40A M3S SIC FULL BRIDGE MODULE |
auf Bestellung 28 Stücke: Lieferzeit 325-329 Tag (e) |
|
||||||||||||||
| NXH030F120M3F1PTG | Hersteller : ON Semiconductor |
SiC MOSFET |
Produkt ist nicht verfügbar |