auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 116 EUR |
| 10+ | 96.5 EUR |
| 112+ | 87.88 EUR |
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Technische Details NXH030P120M3F1PTG onsemi
Description: MOSFET 2N-CH 1200V 42A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 100W (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2271pF @ 800V, Rds On (Max) @ Id, Vgs: 38.5mOhm @ 30A, 18V, Gate Charge (Qg) (Max) @ Vgs: 110nC @ 18V, Vgs(th) (Max) @ Id: 4.4V @ 15mA.
Weitere Produktangebote NXH030P120M3F1PTG nach Preis ab 76.7 EUR bis 100.81 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NXH030P120M3F1PTG | Hersteller : onsemi |
 Description: MOSFET 2N-CH 1200V 42APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 100W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2271pF @ 800V Rds On (Max) @ Id, Vgs: 38.5mOhm @ 30A, 18V Gate Charge (Qg) (Max) @ Vgs: 110nC @ 18V Vgs(th) (Max) @ Id: 4.4V @ 15mA |
auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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