NXH040P120MNF1PG onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 1200V 30A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 74W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
auf Bestellung 82 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 110.42 EUR |
| 28+ | 85.6 EUR |
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Technische Details NXH040P120MNF1PG onsemi
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB, Type of semiconductor module: MOSFET transistor, Semiconductor structure: transistor/transistor, Drain-source voltage: 1.2kV, Drain current: 30A, Case: PIM18, Topology: MOSFET half-bridge, Electrical mounting: Press-in PCB, On-state resistance: 61mΩ, Pulsed drain current: 60A, Power dissipation: 113W, Technology: SiC, Gate-source voltage: -15...25V, Kind of package: in-tray, Mechanical mounting: screw.
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NXH040P120MNF1PG | Hersteller : onsemi |
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| NXH040P120MNF1PG | Hersteller : ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 30A Case: PIM18 Topology: MOSFET half-bridge Electrical mounting: Press-in PCB On-state resistance: 61mΩ Pulsed drain current: 60A Power dissipation: 113W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |