NXH040P120MNF1PG onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 1200V 30A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 74W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
auf Bestellung 82 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 110.05 EUR |
| 28+ | 85.32 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NXH040P120MNF1PG onsemi
Description: MOSFET 2N-CH 1200V 30A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual) Common Source, Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 74W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V, Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V, Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V, Vgs(th) (Max) @ Id: 4.3V @ 10mA.
Weitere Produktangebote NXH040P120MNF1PG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NXH040P120MNF1PG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 30A Automotive |
Produkt ist nicht verfügbar |
||
 |
NXH040P120MNF1PG | Hersteller : onsemi |
MOSFET Modules SiC Module, 2-PACK Half Bridge Topology, 1200 V, 40 mohm SiC M1 MOSFET |
Produkt ist nicht verfügbar |
|
| NXH040P120MNF1PG | Hersteller : ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 30A Case: PIM18 Topology: MOSFET half-bridge Electrical mounting: Press-in PCB On-state resistance: 61mΩ Pulsed drain current: 60A Power dissipation: 113W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |