Produkte > ONSEMI > NXH200B100H4F2SG-R
NXH200B100H4F2SG-R

NXH200B100H4F2SG-R onsemi


NXH200B100H4F2_D-3134838.pdf Hersteller: onsemi
IGBT Modules 1500V F2 BOOST FOR SOLAR PIM
auf Bestellung 19 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+306.8 EUR
10+ 287.34 EUR
20+ 278.12 EUR
Produktrezensionen
Produktbewertung abgeben

Technische Details NXH200B100H4F2SG-R onsemi

Description: 1500V F2 BOOST FOR SOLAR PIM, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Level Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: 36-PIM (56.7x48), IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1000 V, Power - Max: 93 W, Current - Collector Cutoff (Max): 200 µA, Input Capacitance (Cies) @ Vce: 6523 pF @ 20 V.

Weitere Produktangebote NXH200B100H4F2SG-R

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NXH200B100H4F2SG-R Hersteller : onsemi nxh200b100h4f2-d.pdf Description: 1500V F2 BOOST FOR SOLAR PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: 36-PIM (56.7x48)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 93 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 6523 pF @ 20 V
Produkt ist nicht verfügbar