NXH200T120H3Q2F2SG onsemi
Hersteller: onsemiDescription: 80KW GEN-II Q2PACK-200A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: 56-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 330 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 679 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 35.615 nF @ 25 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 335.76 EUR |
| 12+ | 314.48 EUR |
| 36+ | 302.65 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NXH200T120H3Q2F2SG onsemi
Description: 80KW GEN-II Q2PACK-200A MODULE, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: 56-PIM/Q2PACK (93x47), IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 330 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 679 W, Current - Collector Cutoff (Max): 500 µA, Input Capacitance (Cies) @ Vce: 35.615 nF @ 25 V.
Weitere Produktangebote NXH200T120H3Q2F2SG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| NXH200T120H3Q2F2SG | Hersteller : ON Semiconductor |
Si SiC Hybrid Module, Split T Type NPC, IGBT 1200 V, 200 A and 650 V, 150 A. SiC Diode 650 V, 75 A. Solder pins |
Produkt ist nicht verfügbar |
||
| NXH200T120H3Q2F2SG | Hersteller : onsemi |
IGBT Modules Si/SiC Hybrid Module, Split T-Type NPC inverter Solder pins |
Produkt ist nicht verfügbar |