NXH200T120H3Q2F2STNG onsemi

Description: IGBT MOD 650V 330A 679W 56-PIM, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: 56-PIM/Q2PACK (93x47), IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 330 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 679 W, Current - Collector Cutoff (Max): 500 µA, Input Capacitance (Cies) @ Vce: 35.615 nF @ 25 V.