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NXH240B120H3Q1PG

NXH240B120H3Q1PG onsemi

nxh240b120h3q1pg-d.pdf Hersteller: onsemi
Description: PIM Q1 3 CHANNEL IGBT+SIC BOOST
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
NTC Thermistor: Yes
Supplier Device Package: 32-PIM (71x37.4)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 158 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 18.151 nF @ 20 V
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+246.07 EUR
21+ 230.48 EUR
42+ 221.81 EUR
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Technische Details NXH240B120H3Q1PG onsemi

Description: PIM Q1 3 CHANNEL IGBT+SIC BOOST, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Triple, Dual - Common Source, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A, NTC Thermistor: Yes, Supplier Device Package: 32-PIM (71x37.4), IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 68 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 158 W, Current - Collector Cutoff (Max): 400 µA, Input Capacitance (Cies) @ Vce: 18.151 nF @ 20 V.

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NXH240B120H3Q1PG Hersteller : onsemi NXH240B120H3Q1PG_D-2905951.pdf IGBT Modules Power Integrated Module (PIM) 3-channel 1200 V IGBT + SiC Boost, 80 A IGBT and 20 A SiC diode Press-fit pins
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