auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 463.11 EUR |
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Technische Details NXH350N100H4Q2F2P1G-R onsemi
Description: IGBT MOD 1000V 303A 592W 42-PIM, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Level Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 375A, NTC Thermistor: Yes, Supplier Device Package: 42-PIM/Q2PACK (93x47), IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 303 A, Voltage - Collector Emitter Breakdown (Max): 1000 V, Power - Max: 592 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 24.146 nF @ 20 V.
Weitere Produktangebote NXH350N100H4Q2F2P1G-R nach Preis ab 374.88 EUR bis 385.55 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NXH350N100H4Q2F2P1G-R | Hersteller : onsemi |
 Description: IGBT MOD 1000V 303A 592W 42-PIMPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 375A NTC Thermistor: Yes Supplier Device Package: 42-PIM/Q2PACK (93x47) IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 303 A Voltage - Collector Emitter Breakdown (Max): 1000 V Power - Max: 592 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 24.146 nF @ 20 V |
auf Bestellung 72 Stücke: Lieferzeit 10-14 Tag (e) |
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