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NXH350N100H4Q2F2P1G onsemi


nxh350n100h4q2f2p1g-d.pdf
Hersteller: onsemi
Description: IGBT MOD 1000V 303A 276W 42-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 375A
NTC Thermistor: Yes
Supplier Device Package: 42-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 303 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 276 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 24.146 nF @ 20 V
auf Bestellung 36 Stücke:

Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+246.98 EUR
12+224.18 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NXH350N100H4Q2F2P1G onsemi

Description: IGBT MOD 1000V 303A 276W 42-PIM, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Level Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 375A, NTC Thermistor: Yes, Supplier Device Package: 42-PIM/Q2PACK (93x47), IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 303 A, Voltage - Collector Emitter Breakdown (Max): 1000 V, Power - Max: 276 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 24.146 nF @ 20 V.

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NXH350N100H4Q2F2P1G NXH350N100H4Q2F2P1G onsemi nxh350n100h4q2f2p1g-d.pdf IGBT Modules GEN1.5 1500V MASS MARKET
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
1+248.64 EUR
12+237.55 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH350N100H4Q2F2P1G nxh350n100h4q2f2p1g-d.pdf
Hersteller: onsemi
IGBT Modules GEN1.5 1500V MASS MARKET
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+248.64 EUR
12+237.55 EUR
Im Einkaufswagen  Stück im Wert von  UAH