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NXH350N100H4Q2F2S1G-R

NXH350N100H4Q2F2S1G-R onsemi

nxh350n100h4q2f2p1g-d.pdf Hersteller: onsemi
Description: GEN1.5 1500V MASS MARKET
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 375A
NTC Thermistor: Yes
Supplier Device Package: 42-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 303 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 592 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 24.146 nF @ 20 V
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+480.02 EUR
12+ 449.6 EUR
36+ 432.7 EUR
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Technische Details NXH350N100H4Q2F2S1G-R onsemi

Description: GEN1.5 1500V MASS MARKET, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Level Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 375A, NTC Thermistor: Yes, Supplier Device Package: 42-PIM/Q2PACK (93x47), IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 303 A, Voltage - Collector Emitter Breakdown (Max): 1000 V, Power - Max: 592 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 24.146 nF @ 20 V.

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NXH350N100H4Q2F2S1G-R NXH350N100H4Q2F2S1G-R Hersteller : onsemi NXH350N100H4Q2F2P1G_D-2319705.pdf IGBT Modules GEN1.5 1500V MASS MARKET
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