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NXH35C120L2C2S1G onsemi


NXH35C120L2C2_D-2319874.pdf Hersteller: onsemi
IGBT Modules TMPIM 1200V 35A CI
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Technische Details NXH35C120L2C2S1G onsemi

Description: IGBT MOD 1200V 35A 26DIP, Packaging: Tube, Package / Case: 26-PowerDIP Module (1.199", 47.20mm), Mounting Type: Through Hole, Input: Three Phase Bridge Rectifier, Configuration: Three Phase Inverter with Brake, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A, NTC Thermistor: Yes, Supplier Device Package: 26-DIP, Current - Collector (Ic) (Max): 35 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 20 mW, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 8.33 nF @ 20 V.

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NXH35C120L2C2S1G NXH35C120L2C2S1G Hersteller : onsemi Description: IGBT MOD 1200V 35A 26DIP
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.199", 47.20mm)
Mounting Type: Through Hole
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: 26-DIP
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 8.33 nF @ 20 V
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