NXH450B100H4Q2F2PG-R onsemi
Hersteller: onsemiDescription: 1000V75A FSIII IGBT MID SPEED WI
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: 56-PIM (93x47)
Current - Collector (Ic) (Max): 101 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 234 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 9.342 nF @ 20 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 383.61 EUR |
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Technische Details NXH450B100H4Q2F2PG-R onsemi
Description: 1000V75A FSIII IGBT MID SPEED WI, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 150A, NTC Thermistor: Yes, Supplier Device Package: 56-PIM (93x47), Current - Collector (Ic) (Max): 101 A, Voltage - Collector Emitter Breakdown (Max): 1000 V, Power - Max: 234 W, Current - Collector Cutoff (Max): 600 µA, Input Capacitance (Cies) @ Vce: 9.342 nF @ 20 V.
Weitere Produktangebote NXH450B100H4Q2F2PG-R nach Preis ab 410.91 EUR bis 453.27 EUR
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NXH450B100H4Q2F2PG-R | Hersteller : onsemi |
IGBT Modules 1000V,75A FSIII IGBT, MID SPEED WITH RUGGED ANTI-PARALLEL DIODES IN PRESS FIT PINS |
auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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