auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 109.08 EUR |
| 10+ | 102.34 EUR |
| 21+ | 96.01 EUR |
| 42+ | 95.62 EUR |
| 105+ | 93.42 EUR |
| 252+ | 91.08 EUR |
| 504+ | 89.64 EUR |
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Technische Details NXH50M65L4Q1SG onsemi
Description: Q1PACK 50A 650V, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: 56-PIM (93x47), IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 48 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 86 W, Current - Collector Cutoff (Max): 300 µA, Input Capacitance (Cies) @ Vce: 3.137 nF @ 20 V.
Weitere Produktangebote NXH50M65L4Q1SG nach Preis ab 99.54 EUR bis 109.84 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| NXH50M65L4Q1SG | Hersteller : onsemi |
 Description: Q1PACK 50A 650VPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: 56-PIM (93x47) IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 86 W Current - Collector Cutoff (Max): 300 µA Input Capacitance (Cies) @ Vce: 3.137 nF @ 20 V |
auf Bestellung 21 Stücke: Lieferzeit 10-14 Tag (e) |
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| NXH50M65L4Q1SG | Hersteller : ON Semiconductor |
IGBT Module, H6.5 Topology, 650 V, 50 A IGBT, 650 V, 50 A Diode Solder pins |
Produkt ist nicht verfügbar |