Produkte > ONSEMI > NXH80B120H2Q0SNG

NXH80B120H2Q0SNG onsemi

NXH80B120H2Q0_Rev3_Jun2019.pdf
Hersteller: onsemi
Description: PIM POWER MODULE
Input Capacitance (Cies) @ Vce: 9.7 nF @ 25 V
Current - Collector Cutoff (Max): 200 µA
Power - Max: 103 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 41 A
Part Status: Obsolete
Supplier Device Package: 22-PIM/Q0BOOST (55x32.5)
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Dual Boost Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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Technische Details NXH80B120H2Q0SNG onsemi

Description: PIM POWER MODULE, Input Capacitance (Cies) @ Vce: 9.7 nF @ 25 V, Current - Collector Cutoff (Max): 200 µA, Power - Max: 103 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 41 A, Part Status: Obsolete, Supplier Device Package: 22-PIM/Q0BOOST (55x32.5), NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Dual Boost Chopper, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.