NXPSC046506Q WeEn Semiconductors
Hersteller: WeEn Semiconductors
Schottky Diodes & Rectifiers NXPSC046506/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.56 EUR |
| 10+ | 3.2 EUR |
| 100+ | 2.56 EUR |
| 500+ | 2.12 EUR |
| 1000+ | 1.76 EUR |
| 2000+ | 1.7 EUR |
| 5000+ | 1.64 EUR |
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Technische Details NXPSC046506Q WeEn Semiconductors
Description: DIODE SIL CARB 650V 4A TO220AC, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube, Current - Reverse Leakage @ Vr: 170 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 4A, Capacitance @ Vr, F: 130pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns.
Weitere Produktangebote NXPSC046506Q nach Preis ab 2.2 EUR bis 5.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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NXPSC046506Q | WeEn Semiconductors |
Description: DIODE SIL CARB 650V 4A TO220AC Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 170 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-220AC Current - Average Rectified (Io): 4A Capacitance @ Vr, F: 130pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns |
auf Bestellung 20200 Stücke: Lieferzeit 10-14 Tag (e) |
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| NXPSC046506Q |
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Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 650V 4A TO220AC
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Description: DIODE SIL CARB 650V 4A TO220AC
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
auf Bestellung 20200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.68 EUR |
| 50+ | 3.08 EUR |
| 100+ | 2.81 EUR |
| 500+ | 2.33 EUR |
| 1000+ | 2.2 EUR |