NXPSC04650B6J WeEn Semiconductors
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 4A D2PAK
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: D2PAK
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
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Technische Details NXPSC04650B6J WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 4A D2PAK, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 170 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: D2PAK, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Current - Average Rectified (Io): 4A, Capacitance @ Vr, F: 130pF @ 1V, 1MHz, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount.
Weitere Produktangebote NXPSC04650B6J nach Preis ab 2.89 EUR bis 5.82 EUR
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NXPSC04650B6J | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 4A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 170 µA @ 650 V |
auf Bestellung 3090 Stücke: Lieferzeit 10-14 Tag (e) |
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| NXPSC04650B6J |
|
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
auf Bestellung 3090 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.82 EUR |
| 10+ | 4 EUR |
| 100+ | 2.89 EUR |