NXPSC06650BJ WeEn Semiconductors
Hersteller: WeEn SemiconductorsDescription: DIODE SIL CARBIDE 650V 6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details NXPSC06650BJ WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 190pF @ 1V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: D2PAK, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A, Current - Reverse Leakage @ Vr: 200 µA @ 650 V.
Weitere Produktangebote NXPSC06650BJ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
NXPSC06650BJ | Hersteller : WeEn Semiconductors |
Schottky Diodes & Rectifiers NXPSC06650B/D2PAK/STANDARD M |
Produkt ist nicht verfügbar |