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NXPSC06650X6Q

NXPSC06650X6Q WeEn Semiconductors

nxpsc06650x.pdf
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A TO220F
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Last Time Buy
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220F
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 2855 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.85 EUR
10+7.06 EUR
100+5.78 EUR
500+4.93 EUR
1000+4.32 EUR
Mindestbestellmenge: 3 Stücke
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Technische Details NXPSC06650X6Q WeEn Semiconductors

Description: DIODE SIL CARBIDE 650V 6A TO220F, Current - Reverse Leakage @ Vr: 200 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Last Time Buy, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-220F, Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 190pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Full Pack, Isolated Tab, Packaging: Tube.