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NXPSC06650X6Q

NXPSC06650X6Q WeEn Semiconductors

NXPSC066506Q.pdf
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A TO220F
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Last Time Buy
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220F
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 194 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.45 EUR
50+4.89 EUR
100+4.45 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NXPSC06650X6Q WeEn Semiconductors

Description: DIODE SIL CARBIDE 650V 6A TO220F, Current - Reverse Leakage @ Vr: 200 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Last Time Buy, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-220F, Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 190pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Full Pack, Isolated Tab, Packaging: Tube.

Weitere Produktangebote NXPSC06650X6Q

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NXPSC06650X6Q NXPSC06650X6Q WeEn Semiconductors NXPSC066506Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 36A
Max. forward voltage: 1.7V
Technology: SiC
Max. off-state voltage: 650V
Load current: 6A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC06650X6Q NXPSC066506Q.pdf
NXPSC06650X6Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 36A
Max. forward voltage: 1.7V
Technology: SiC
Max. off-state voltage: 650V
Load current: 6A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH