NXPSC08650B6J WeEn Semiconductors
Hersteller: WeEn SemiconductorsDescription: DIODE SIL CARBIDE 650V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 4.55 EUR |
| 1600+ | 3.9 EUR |
| 2400+ | 3.67 EUR |
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Technische Details NXPSC08650B6J WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 8A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 260pF @ 1V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: D2PAK, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 230 µA @ 650 V.
Weitere Produktangebote NXPSC08650B6J nach Preis ab 5.12 EUR bis 7.53 EUR
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NXPSC08650B6J | Hersteller : WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 8A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 230 µA @ 650 V |
auf Bestellung 3160 Stücke: Lieferzeit 10-14 Tag (e) |
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NXPSC08650B6J | Hersteller : WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 8A; reel,tape Type of diode: Schottky rectifying Case: D2PAK Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 48A Kind of package: reel; tape Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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NXPSC08650B6J | Hersteller : WeEn Semiconductors |
Schottky Diodes & Rectifiers NXPSC08650B6/D2PAK/REEL 13" Q1/T1 *STANDARD MARK SMD |
Produkt ist nicht verfügbar |
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NXPSC08650B6J | Hersteller : WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 8A; reel,tape Type of diode: Schottky rectifying Case: D2PAK Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 48A Kind of package: reel; tape |
Produkt ist nicht verfügbar |