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NXPSC12650B6J WeEn Semiconductors


NXPSC12650B6J.pdf Hersteller: WeEn Semiconductors
NXPSC12650B6J SMD Schottky diodes
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Technische Details NXPSC12650B6J WeEn Semiconductors

Description: DIODE SIL CARBIDE 650V 12A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 380pF @ 1V, 1MHz, Current - Average Rectified (Io): 12A, Supplier Device Package: D2PAK, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A, Current - Reverse Leakage @ Vr: 80 µA @ 650 V.

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NXPSC12650B6J NXPSC12650B6J Hersteller : WeEn Semiconductors NXPSC12650B6J.pdf Description: DIODE SIL CARBIDE 650V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
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NXPSC12650B6J NXPSC12650B6J Hersteller : WeEn Semiconductors NXPSC12650B-1397744.pdf Schottky Diodes & Rectifiers NXPSC12650B/TO263/STANDARD MARKING * HORIZONTAL, RAIL PACK
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