NXPSC166506Q WEEN SEMICONDUCTORS
Hersteller: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - NXPSC166506Q - SiC-Schottky-Diode, Einfach, 650 V, 16 A, 26 nC, TO-220AC
tariffCode: 85411000
Bauform - Diode: TO-220AC
Kapazitive Gesamtladung: 26nC
rohsCompliant: YES
Diodenmontage: Durchsteckmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 16A
euEccn: NLR
Anzahl der Pins: 2 Pins
Produktpalette: -
productTraceability: No
Periodische Spitzensperrspannung: 650V
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
| Anzahl | Privatkunde |
|---|---|
| 18+ | 14.15 EUR |
| 24+ | 9.84 EUR |
| 100+ | 6.02 EUR |
| 500+ | 5.16 EUR |
| 1000+ | 5.06 EUR |
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Technische Details NXPSC166506Q WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - NXPSC166506Q - SiC-Schottky-Diode, Einfach, 650 V, 16 A, 26 nC, TO-220AC, tariffCode: 85411000, Bauform - Diode: TO-220AC, Kapazitive Gesamtladung: 26nC, rohsCompliant: YES, Diodenmontage: Durchsteckmontage, hazardous: false, rohsPhthalatesCompliant: YES, Diodenkonfiguration: Einfach, Qualifikation: -, isCanonical: Y, usEccn: EAR99, Durchschnittlicher Durchlassstrom: 16A, euEccn: NLR, Anzahl der Pins: 2 Pins, Produktpalette: -, productTraceability: No, Periodische Spitzensperrspannung: 650V, Betriebstemperatur, max.: 175°C, SVHC: To Be Advised.
Weitere Produktangebote NXPSC166506Q nach Preis ab 6.06 EUR bis 15.41 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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NXPSC166506Q | WeEn Semiconductors |
Description: DIODE SIL CARB 650V 16A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 534pF @ 1V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
auf Bestellung 2998 Stücke: Lieferzeit 10-14 Tag (e) |
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| NXPSC166506Q |
|
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 650V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 534pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARB 650V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 534pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 2998 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.41 EUR |
| 50+ | 8.34 EUR |
| 100+ | 7.66 EUR |
| 500+ | 6.47 EUR |
| 1000+ | 6.08 EUR |
| 2000+ | 6.06 EUR |