NXPSC166506Q WeEn Semiconductors
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 650V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 534pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARB 650V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 534pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 3003 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 15.24 EUR |
10+ | 13.06 EUR |
100+ | 10.88 EUR |
500+ | 9.6 EUR |
1000+ | 8.64 EUR |
2000+ | 8.1 EUR |
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Technische Details NXPSC166506Q WeEn Semiconductors
Description: DIODE SIL CARB 650V 16A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 534pF @ 1V, 1MHz, Current - Average Rectified (Io): 16A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: 175°C (Max), Part Status: Last Time Buy, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A, Current - Reverse Leakage @ Vr: 100 µA @ 650 V.
Weitere Produktangebote NXPSC166506Q
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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NXPSC166506Q | Hersteller : WEEN SEMICONDUCTORS |
Description: WEEN SEMICONDUCTORS - NXPSC166506Q - SiC-Schottky-Diode, Einfach, 650 V, 16 A, 26 nC, TO-220AC tariffCode: 85411000 Bauform - Diode: TO-220AC Kapazitive Gesamtladung: 26nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 16A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 2 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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NXPSC166506Q | Hersteller : WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO220AC Max. off-state voltage: 650V Load current: 16A Semiconductor structure: single diode Max. forward impulse current: 96A Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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NXPSC166506Q | Hersteller : WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC16650/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK |
Produkt ist nicht verfügbar |
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NXPSC166506Q | Hersteller : WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO220AC Max. off-state voltage: 650V Load current: 16A Semiconductor structure: single diode Max. forward impulse current: 96A |
Produkt ist nicht verfügbar |