NXV08A170DB2 onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 80V 200A APM12-CBA
Packaging: Tray
Package / Case: 12-PowerDIP Module (1.118", 28.40mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 40V
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: APM12-CBA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 33.44 EUR |
| 10+ | 23.95 EUR |
| 25+ | 21.44 EUR |
| 80+ | 18.99 EUR |
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Technische Details NXV08A170DB2 onsemi
Description: MOSFET 2N-CH 80V 200A APM12-CBA, Packaging: Tray, Package / Case: 12-PowerDIP Module (1.118", 28.40mm), Mounting Type: Through Hole, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 200A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 40V, Rds On (Max) @ Id, Vgs: 0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V, Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: APM12-CBA, Grade: Automotive, Qualification: AEC-Q100.
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