NXV08H300DT1 onsemi
auf Bestellung 40 Stücke:
Lieferzeit 157-161 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 111.2 EUR |
| 10+ | 100.8 EUR |
| 25+ | 97.31 EUR |
| 40+ | 93.83 EUR |
| 120+ | 90.36 EUR |
| 280+ | 89.46 EUR |
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Technische Details NXV08H300DT1 onsemi
Description: APM17-MDC, MV7 80V, AL2O3, 2 PHA, Packaging: Tube, Package / Case: 17-PowerDIP Module (1.390", 35.30mm), Mounting Type: Through Hole, Configuration: 4 N-Channel, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 80V, Input Capacitance (Ciss) (Max) @ Vds: 30150pF @ 40V, Rds On (Max) @ Id, Vgs: 765µOhm @ 160A, 12V, 580µOhm @ 160A, 12V, Gate Charge (Qg) (Max) @ Vgs: 502nC @ 12V, Vgs(th) (Max) @ Id: 4.6V @ 1mA, Supplier Device Package: APM17-MDC, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NXV08H300DT1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| NXV08H300DT1 | Hersteller : ON Semiconductor |
 Dual Half Bridge Automotive Power MOSFET MODULE |
Produkt ist nicht verfügbar |
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| NXV08H300DT1 | Hersteller : onsemi |
Description: APM17-MDC, MV7 80V, AL2O3, 2 PHA Packaging: Tube Package / Case: 17-PowerDIP Module (1.390", 35.30mm) Mounting Type: Through Hole Configuration: 4 N-Channel Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Input Capacitance (Ciss) (Max) @ Vds: 30150pF @ 40V Rds On (Max) @ Id, Vgs: 765µOhm @ 160A, 12V, 580µOhm @ 160A, 12V Gate Charge (Qg) (Max) @ Vgs: 502nC @ 12V Vgs(th) (Max) @ Id: 4.6V @ 1mA Supplier Device Package: APM17-MDC Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |