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NXV08H300DT1

NXV08H300DT1 onsemi

NXV08H300DT1_D-3326443.pdf Hersteller: onsemi
MOSFET Modules Dual Half Bridge Automotive Power MOSFET Module, APM17
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+111.2 EUR
10+104.93 EUR
40+97.86 EUR
120+95.92 EUR
280+94.37 EUR
520+93.53 EUR
1000+93.51 EUR
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Technische Details NXV08H300DT1 onsemi

Description: APM17-MDC, MV7 80V, AL2O3, 2 PHA, Packaging: Tube, Package / Case: 17-PowerDIP Module (1.390", 35.30mm), Mounting Type: Through Hole, Configuration: 4 N-Channel, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 80V, Input Capacitance (Ciss) (Max) @ Vds: 30150pF @ 40V, Rds On (Max) @ Id, Vgs: 0.765mOhm @ 160A, 12V, 0.580mOhm @ 160A, 12V, Gate Charge (Qg) (Max) @ Vgs: 502nC @ 12V, Vgs(th) (Max) @ Id: 4.6V @ 1mA, Supplier Device Package: APM17-MDC, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NXV08H300DT1 nach Preis ab 103.15 EUR bis 103.15 EUR

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NXV08H300DT1 Hersteller : onsemi nxv08h300dt1-d.pdf Description: APM17-MDC, MV7 80V, AL2O3, 2 PHA
Packaging: Tube
Package / Case: 17-PowerDIP Module (1.390", 35.30mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 30150pF @ 40V
Rds On (Max) @ Id, Vgs: 0.765mOhm @ 160A, 12V, 0.580mOhm @ 160A, 12V
Gate Charge (Qg) (Max) @ Vgs: 502nC @ 12V
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Supplier Device Package: APM17-MDC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+103.15 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
NXV08H300DT1 Hersteller : ON Semiconductor nxv08h300dt1-d.pdf Dual Half Bridge Automotive Power MOSFET MODULE
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NXV08H300DT1 Hersteller : ONSEMI nxv08h300dt1-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 80V; APM17-MDC; THT; Ugs: ±20V; tube
Case: APM17-MDC
Kind of package: tube
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Topology: MOSFET half-bridge
Drain-source voltage: 80V
Gate-source voltage: ±20V
Type of semiconductor module: MOSFET transistor
On-state resistance: 1.32mΩ
Electrical mounting: THT
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