NXV08H300DT1 onsemi
| Anzahl | Privatkunde |
|---|---|
| 1+ | 132.33 EUR |
| 10+ | 124.87 EUR |
| 40+ | 116.45 EUR |
| 120+ | 114.14 EUR |
| 280+ | 112.3 EUR |
| 520+ | 111.3 EUR |
| 1000+ | 111.28 EUR |
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Technische Details NXV08H300DT1 onsemi
Description: APM17-MDC, MV7 80V, AL2O3, 2 PHA, Packaging: Tube, Package / Case: 17-PowerDIP Module (1.390", 35.30mm), Mounting Type: Through Hole, Configuration: 4 N-Channel, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 80V, Input Capacitance (Ciss) (Max) @ Vds: 30150pF @ 40V, Rds On (Max) @ Id, Vgs: 0.765mOhm @ 160A, 12V, 0.580mOhm @ 160A, 12V, Gate Charge (Qg) (Max) @ Vgs: 502nC @ 12V, Vgs(th) (Max) @ Id: 4.6V @ 1mA, Supplier Device Package: APM17-MDC, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NXV08H300DT1 nach Preis ab 122.75 EUR bis 122.75 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| NXV08H300DT1 | onsemi |
 Description: APM17-MDC, MV7 80V, AL2O3, 2 PHAPackaging: Tube Package / Case: 17-PowerDIP Module (1.390", 35.30mm) Mounting Type: Through Hole Configuration: 4 N-Channel Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Input Capacitance (Ciss) (Max) @ Vds: 30150pF @ 40V Rds On (Max) @ Id, Vgs: 0.765mOhm @ 160A, 12V, 0.580mOhm @ 160A, 12V Gate Charge (Qg) (Max) @ Vgs: 502nC @ 12V Vgs(th) (Max) @ Id: 4.6V @ 1mA Supplier Device Package: APM17-MDC Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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| NXV08H300DT1 |
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Hersteller: onsemi
Description: APM17-MDC, MV7 80V, AL2O3, 2 PHA
Packaging: Tube
Package / Case: 17-PowerDIP Module (1.390", 35.30mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 30150pF @ 40V
Rds On (Max) @ Id, Vgs: 0.765mOhm @ 160A, 12V, 0.580mOhm @ 160A, 12V
Gate Charge (Qg) (Max) @ Vgs: 502nC @ 12V
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Supplier Device Package: APM17-MDC
Grade: Automotive
Qualification: AEC-Q101
Description: APM17-MDC, MV7 80V, AL2O3, 2 PHA
Packaging: Tube
Package / Case: 17-PowerDIP Module (1.390", 35.30mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 30150pF @ 40V
Rds On (Max) @ Id, Vgs: 0.765mOhm @ 160A, 12V, 0.580mOhm @ 160A, 12V
Gate Charge (Qg) (Max) @ Vgs: 502nC @ 12V
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Supplier Device Package: APM17-MDC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 122.75 EUR |