NXV08H350XT1 onsemi
| Anzahl | Privatkunde |
|---|---|
| 1+ | 151.78 EUR |
| 10+ | 117.94 EUR |
| 120+ | 116.01 EUR |
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Technische Details NXV08H350XT1 onsemi
Description: MOSFET 80V APM17-MDC, Packaging: Bulk, Package / Case: 17-PowerDIP Module (1.390", 35.30mm), Mounting Type: Through Hole, Operating Temperature: -40°C ~ 125°C (TA), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 80V, Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V, Rds On (Max) @ Id, Vgs: 0.762mOhm @ 160A, 12V, Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V, Vgs(th) (Max) @ Id: 4.6V @ 1mA, Supplier Device Package: APM17-MDC, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NXV08H350XT1 nach Preis ab 112.65 EUR bis 151.93 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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NXV08H350XT1 | onsemi |
 Description: MOSFET 80V APM17-MDCPackaging: Bulk Package / Case: 17-PowerDIP Module (1.390", 35.30mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TA) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V Rds On (Max) @ Id, Vgs: 0.762mOhm @ 160A, 12V Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V Vgs(th) (Max) @ Id: 4.6V @ 1mA Supplier Device Package: APM17-MDC Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3720 Stücke: Lieferzeit 10-14 Tag (e) |
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| NXV08H350XT1 |
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Hersteller: onsemi
Description: MOSFET 80V APM17-MDC
Packaging: Bulk
Package / Case: 17-PowerDIP Module (1.390", 35.30mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TA)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V
Rds On (Max) @ Id, Vgs: 0.762mOhm @ 160A, 12V
Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Supplier Device Package: APM17-MDC
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 80V APM17-MDC
Packaging: Bulk
Package / Case: 17-PowerDIP Module (1.390", 35.30mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TA)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V
Rds On (Max) @ Id, Vgs: 0.762mOhm @ 160A, 12V
Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Supplier Device Package: APM17-MDC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3720 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 151.93 EUR |
| 10+ | 126.63 EUR |
| 40+ | 117.66 EUR |
| 120+ | 112.65 EUR |