P10F50HP2-5600 SHINDENGEN
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 10A; Idm: 40A; 79W
Case: FTO-220AG (SC91)
Mounting: THT
Kind of package: bulk
Drain-source voltage: 500V
Drain current: 10A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Power dissipation: 79W
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 10A; Idm: 40A; 79W
Case: FTO-220AG (SC91)
Mounting: THT
Kind of package: bulk
Drain-source voltage: 500V
Drain current: 10A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Power dissipation: 79W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
40+ | 1.79 EUR |
47+ | 1.52 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details P10F50HP2-5600 SHINDENGEN
Category: THT N channel transistors, Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 10A; Idm: 40A; 79W, Case: FTO-220AG (SC91), Mounting: THT, Kind of package: bulk, Drain-source voltage: 500V, Drain current: 10A, On-state resistance: 0.75Ω, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 20nC, Technology: Hi-PotMOS2, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 40A, Power dissipation: 79W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P10F50HP2-5600 nach Preis ab 1.79 EUR bis 1.79 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
---|---|---|---|---|---|---|---|---|---|
P10F50HP2-5600 | Hersteller : SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 10A; Idm: 40A; 79W Case: FTO-220AG (SC91) Mounting: THT Kind of package: bulk Drain-source voltage: 500V Drain current: 10A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 20nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 40A Power dissipation: 79W |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||
P10F50HP2-5600 | Hersteller : Shindengen | MOSFET High Switching Speed High Voltage |
Produkt ist nicht verfügbar |