P10F50HP2-5600 SHINDENGEN
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 10A; Idm: 40A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 79W
Case: FTO-220AG (SC91)
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 20nC
Kind of channel: enhancement
Pulsed drain current: 40A
Gate-source voltage: ±30V
Kind of package: bulk
Technology: Hi-PotMOS2
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Technische Details P10F50HP2-5600 SHINDENGEN
Category: THT N channel transistors, Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 10A; Idm: 40A; 79W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 500V, Drain current: 10A, Power dissipation: 79W, Case: FTO-220AG (SC91), On-state resistance: 0.75Ω, Mounting: THT, Gate charge: 20nC, Kind of channel: enhancement, Pulsed drain current: 40A, Gate-source voltage: ±30V, Kind of package: bulk, Technology: Hi-PotMOS2.
Weitere Produktangebote P10F50HP2-5600
| Foto | Bezeichnung | Hersteller | Beschreibung |
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P10F50HP2-5600 | Hersteller : Shindengen |
MOSFETs High Switching Speed High Voltage |
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