P12F60HP2-5600 SHINDENGEN
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 12A; Idm: 48A; 90W
Mounting: THT
Case: FTO-220AG (SC91)
Kind of package: bulk
Type of transistor: N-MOSFET
On-state resistance: 670mΩ
Gate charge: 26.5nC
Drain current: 12A
Drain-source voltage: 600V
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
Polarisation: unipolar
Power dissipation: 90W
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 12A; Idm: 48A; 90W
Mounting: THT
Case: FTO-220AG (SC91)
Kind of package: bulk
Type of transistor: N-MOSFET
On-state resistance: 670mΩ
Gate charge: 26.5nC
Drain current: 12A
Drain-source voltage: 600V
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
Polarisation: unipolar
Power dissipation: 90W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 350 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
47+ | 1.53 EUR |
53+ | 1.37 EUR |
63+ | 1.14 EUR |
67+ | 1.07 EUR |
500+ | 1.06 EUR |
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Technische Details P12F60HP2-5600 SHINDENGEN
Category: THT N channel transistors, Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 12A; Idm: 48A; 90W, Mounting: THT, Case: FTO-220AG (SC91), Kind of package: bulk, Type of transistor: N-MOSFET, On-state resistance: 670mΩ, Gate charge: 26.5nC, Drain current: 12A, Drain-source voltage: 600V, Technology: Hi-PotMOS2, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 48A, Polarisation: unipolar, Power dissipation: 90W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P12F60HP2-5600 nach Preis ab 1.07 EUR bis 2.09 EUR
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P12F60HP2-5600 | Hersteller : SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 12A; Idm: 48A; 90W Mounting: THT Case: FTO-220AG (SC91) Kind of package: bulk Type of transistor: N-MOSFET On-state resistance: 670mΩ Gate charge: 26.5nC Drain current: 12A Drain-source voltage: 600V Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 48A Polarisation: unipolar Power dissipation: 90W |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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P12F60HP2-5600 | Hersteller : Shindengen Electric Manufacturing Co. | P12F60HP2-5600 |
auf Bestellung 338 Stücke: Lieferzeit 14-21 Tag (e) |
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P12F60HP2-5600 | Hersteller : Shindengen | MOSFET High Switching Speed High Voltage |
Produkt ist nicht verfügbar |