P16B6SBK-5071 SHINDENGEN
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 48A; 23W
Kind of package: reel; tape
Polarisation: unipolar
Case: FB (TO252AA)
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 48A
Drain current: 16A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Power dissipation: 23W
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 48A; 23W
Kind of package: reel; tape
Polarisation: unipolar
Case: FB (TO252AA)
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 48A
Drain current: 16A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Power dissipation: 23W
Anzahl je Verpackung: 1 Stücke
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Technische Details P16B6SBK-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 48A; 23W, Kind of package: reel; tape, Polarisation: unipolar, Case: FB (TO252AA), Mounting: SMD, Gate charge: 17nC, Kind of channel: enhanced, Gate-source voltage: ±10V, Pulsed drain current: 48A, Drain current: 16A, On-state resistance: 37mΩ, Type of transistor: N-MOSFET, Drain-source voltage: 60V, Power dissipation: 23W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P16B6SBK-5071
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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P16B6SBK-5071 | Hersteller : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 48A; 23W Kind of package: reel; tape Polarisation: unipolar Case: FB (TO252AA) Mounting: SMD Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 48A Drain current: 16A On-state resistance: 37mΩ Type of transistor: N-MOSFET Drain-source voltage: 60V Power dissipation: 23W |
Produkt ist nicht verfügbar |