P20B12SN-5071 SHINDENGEN

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 20A; Idm: 60A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 44W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: EETMOS3
Anzahl je Verpackung: 1 Stücke
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Technische Details P20B12SN-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 20A; Idm: 60A; 44W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 120V, Drain current: 20A, Pulsed drain current: 60A, Power dissipation: 44W, Case: FB (TO252AA), Gate-source voltage: ±20V, On-state resistance: 42mΩ, Mounting: SMD, Gate charge: 37nC, Kind of package: reel; tape, Kind of channel: enhancement, Technology: EETMOS3, Anzahl je Verpackung: 1 Stücke.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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P20B12SN-5071 | Hersteller : SHINDENGEN |
![]() Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 20A; Idm: 60A; 44W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 20A Pulsed drain current: 60A Power dissipation: 44W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhancement Technology: EETMOS3 |
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